Abstract
Single crystals of Bi2Ga4O9 are grown from a solution in a bismuth oxide melt. The structure (orthorhombic, space group Pbam, a = 7.918(2) Å, b = 8.299(2) Å, c = 5.894(2) Å, Z = 2) is refined to R = 0.052 in the anisotropic approximation based on single-crystal X-ray diffraction data. The structure is a framework. The bismuth(III) atoms are sixfold coordinated; gallium(III) exists in both tetrahedral and octahedral coordinations. The thermal expansion of Bi2Ga4O9 is studied by high-temperature X-ray powder diffraction method and is found to be sharply anisotropic. A structural interpretation of the anisotropy is proposed. Chemical distortion in the Bi2M4O9 compounds with M = Fe(III), Al, or Ga is analyzed and compared with the thermal expansion of Bi2Ga4O9.
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Original Russian Text © S.K. Filatov, S.V. Krivovichev, Yu.V. Aleksandrova, R.S. Bubnova, A.V. Egorysheva, P. Burns, Yu.F. Kargin, V.V. Volkov, 2006, published in Zhurnal Neorganicheskoi Khimii, 2006, Vol. 51, No. 6, pp. 948–953.
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Filatov, S.K., Krivovichev, S.V., Aleksandrova, Y.V. et al. Crystal-structure refinement, thermal expansion, and chemical distortion of Bi2Ga4O9 . Russ. J. Inorg. Chem. 51, 878–883 (2006). https://doi.org/10.1134/S0036023606060052
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DOI: https://doi.org/10.1134/S0036023606060052