Abstract
An attractive trend in the further progress of nanoelectronics is the development of a new generation of non-volatile memory devices, namely electric phase memory or PC-RAM (Phase Change Random Access Memory). However, there are a number of related unsolved problems, such as the stability of the amorphous phase, high power consumption, long information storage time, etc. In order to solve these problems, a new approach has been proposed, which consists in using Ag–Cu binary alloy nanoparticles as PC-RAM cells. To this end, the molecular dynamics method was used to study the processes of structuring these alloy nanoparticles (NPs) with a size of D = 2–10 nm of different compositions when the heat energy removal rate was varied. The stability criteria of the amorphous and crystalline structure were evaluated and conclusions were drawn about the target composition and size of NPs, suitable for the fabrication of phase change memory cells. It has been shown that using binary Ag–Cu alloy NPs, it is possible to reduce the size of a single cell to 6–8 nm and the information recording time to 2.5 ns and, for the first time, based on the eutectic approach, to achieve the stability of the amorphous and crystalline structure at different rates of heat energy removal.
REFERENCES
R. O. Jones, “Phase change memory materials: Rationalizing the dominance of Ge/Sb/Te alloys,” Phys. Rev. B 101, 24103 (2020). https://doi.org/10.1103/physrevb.101.024103
M. Le Gallo and A. Sebastian, “An overview of phase-change memory device physics,” J. Phys. D: Appl. Phys. 53, 213002 (2020). https://doi.org/10.1088/1361-6463/ab7794
P. I. Lazarenko, S. A. Kozyukhin, A. A. Sherchenkov, A. V. Babich, S. P. Timoshenkov, D. G. Gromov, A. V. Zabolotskaya, and V. V. Kozik, “Electrophysical properties of Ge–Sb–Te thin films for phase change memory devices,” Russ. Phys. J. 59, 1417–1424 (2016). https://doi.org/10.1007/s11182-017-0925-x
G. Navarro, G. Bourgeois, J. Kluge, A. Serra, A. Verdy, J. Garrione, M. Cyrille, N. Bernier, A. Jannaud, C. Sabbione, M. Bernard, E. Nolot, F. Fillot, P. Noe, L. Fellouh, G. Rodriguez, V. Beugin, O. Cueto, N. Castellani, J. Coignus, V. Delaye, C. Socquet-Clerc, T. Magis, C. Boixaderas, S. Barnola, and E. Nowak, “Phase-change memory: Performance, roles and challenges,” in 2018 IEEE International Memory Workshop (IMW), Kyoto, Japan, 2018 (IEEE, 2018). https://doi.org/10.1109/imw.2018.8388845
K. Aryana, J. T. Gaskins, J. Nag, D. A. Stewart, Zh. Bai, S. Mukhopadhyay, J. C. Read, D. H. Olson, E. R. Hoglund, J. M. Howe, A. Giri, M. K. Grobis, and P. E. Hopkins, “Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices,” Nat. Commun. 12, 774 (2021). https://doi.org/10.1038/s41467-020-20661-8
Yu. Liu, X. Li, H. Zheng, N. Chen, X. Wang, X. Zhang, H. Sun, and Sh. Zhang, “High-throughput screening for phase-change memory materials,” Adv. Funct. Mater. 31, 2009803 (2021). https://doi.org/10.1002/adfm.202009803
M. Xu, C. Qiao, K.-H. Xue, H. Tong, X. Cheng, S. Wang, C.-Zh. Wang, K.-M. Ho, M. Xu, and X. Miao, “Polyamorphism in K2Sb8Se13 for multi-level phase-change memory,” J. Mater. Chem. C 8, 6364–6369 (2020). https://doi.org/10.1039/d0tc01089h
G. Mazzone, V. Rosato, M. Pintore, F. Delogu, P. F. Demontis, and G. B. Suffritti, “Molecular-dynamics calculations of thermodynamic properties of metastable alloys,” Phys. Rev. B 55, 837–842 (1997). https://doi.org/10.1103/physrevb.55.837
“XMakemol–A program for visualizing atomic and molecular systems,” https://kujss.iraqjournals.com/pdf_166170_8dd024058ce4abb6c364bec514cecef8.html.
A. Stukowski, “Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool,” Modell. Simul. Mater. Sci. Eng. 18, 015012 (2010). https://doi.org/10.1088/0965-0393/18/1/015012
T. Pang, An Introduction to Computational Physics (Cambridge Univ. Press, Cambridge, 2006). https://doi.org/10.1017/cbo9780511800870
J. Tominaga, A. V. Kolobov, P. J. Fons, X. Wang, Yu. Saito, T. Nakano, M. Hase, S. Murakami, J. Herfort, and Yu. Takagaki, “Giant multiferroic effects in topological GeTe–Sb2Te3 superlattices,” Sci. Technol. Adv. Mater. 16, 014402 (2015). https://doi.org/10.1088/1468-6996/16/1/014402
L. V. Redel’, S. L. Gafner, Yu. Ya. Gafner, I. S. Zamulin, and Zh. V. Goloven’ko, “Analysis of the applicability of Ni, Cu, Au, Pt, and Pd nanoclusters for data recording,” Phys. Solid State 59, 413–422 (2017). https://doi.org/10.1134/s1063783417020238
D. A. Bashkova, Yu. Gafner, Ya, S. Gafner, and L. V. Redel’, “Application of silver nanoparticles as cells of phase-varied memory,”, Fundam. Probl. Sovrem. Materialoved. (2018).
E. Panizon, D. Bochicchio, G. Rossi, and R. Ferrando, “Tuning the structure of nanoparticles by small concentrations of impurities,” Chem. Mater. 26, 3354–3356 (2014). https://doi.org/10.1021/cm501001f
S. V. Dubkov, A. I. Savitskiy, A. Yu. Trifonov, G. S. Yeritsyan, Yu. P. Shaman, E. P. Kitsyuk, A. Tarasov, O. Shtyka, R. Ciesielski, and D. S. Gromov, “SERS in red spectrum region through array of Ag–Cu composite nanoparticles formed by vacuum-thermal evaporation,” Opt. Mater.: X 7, 100055 (2020). https://doi.org/10.1016/j.omx.2020.100055
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The research was carried out under Grant No. 23-29-10011 of the Russian Science Foundation, https://rscf.ru/project/23-29-10011/ with equal financial support from the Government of the Republic of Khakassia.
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Translated by Z. Mesarkishvili
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Ryzhkova, D.A., Gafner, S.L. & Gafner, Y.Y. Use of Eutectic Effects in the Possible Creation of Phase-Change Memory Cells Based on Ag–Cu Nanoclusters. Phys. Metals Metallogr. 124, 1041–1048 (2023). https://doi.org/10.1134/S0031918X23601634
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DOI: https://doi.org/10.1134/S0031918X23601634