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Electroluminescence of Single InGaN/GaN Micropyramids

Abstract

The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520–590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.

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ACKNOWLEDGMENTS

D.V. Denisov thanks a partial support of the Ministry of Education and Science of the Russian Federation, state order no. 16.9789.2017/BCh). We thank O. Kryliouk for providing the micropyramid samples.

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Correspondence to A. V. Babichev.

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Translated by N. Petrov

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Babichev, A.V., Denisov, D.V., Lavenus, P. et al. Electroluminescence of Single InGaN/GaN Micropyramids. Opt. Spectrosc. 126, 118–123 (2019). https://doi.org/10.1134/S0030400X19020036

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  • DOI: https://doi.org/10.1134/S0030400X19020036