Influence of topological defects on the structure of G and D spectral bands of a single-layer carbon nanotube
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A topological defect in a carbon nanotube grown by chemical vapor deposition from methane onto a silicon substrate with thermal oxide has been investigated and visualized (with a resolution of about 1.5 μm) by confocal Raman spectroscopy. Vibrational Raman spectra of molecular fragments of a single-wall carbon nanotube (SWCNT) without a defect and with Stone–Wales defects (two pentagonal and two heptagonal cells) are calculated. The influence of defects on the shape of G-band components (G+ and G–), which makes it possible to determine the nanotube conductivity type, is considered.
KeywordsRaman Spectrum Wales Defect Topological Defect Molecular Fragment Conductivity Type
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