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Crystal Growth and Luminescence Properties of TbGa3(BO3)4 Crystals

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Abstract

TbGa3(BO3)4 crystals were grown using the Bi2Mo3O12:B2O3:Tb2O3 flux, which decreases contamination of Bi in the resulting crystal. The produced compound crystallizes in the R32 space group with unit cell parameters: a = 9.4512(4) Å, c = 7.4532(2) Å. A strong green emission of the luminescence is primarily dominated by the 5D4 to 7F5 transition in Tb3+. Annealing these crystals in a hydrogen atmosphere at 800 °C causes a reduction in the luminescence efficiency. On the other hand, annealing in air results in the increment of QY up to the value of 38%.

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The work was supported by Russian Science Foundation No. 23-19-00617.

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

    M. I. Rakhmanova

  2. Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

    K. A. Kokh, N. G. Kononova & A. B. Kuznetsov

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  1. M. I. Rakhmanova
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  2. K. A. Kokh
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  3. N. G. Kononova
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  4. A. B. Kuznetsov
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Correspondence to M. I. Rakhmanova.

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Text © The Author(s), 2024, published in Zhurnal Strukturnoi Khimii, 2024, Vol. 65, No. 4, 124949.https://doi.org/10.26902/JSC_id124949

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Rakhmanova, M.I., Kokh, K.A., Kononova, N.G. et al. Crystal Growth and Luminescence Properties of TbGa3(BO3)4 Crystals. J Struct Chem 65, 693–700 (2024). https://doi.org/10.1134/S0022476624040061

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