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CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS

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Abstract

The work discusses mechanisms of formation, crystal structure, some features of defect formation, and composition of the solid carbide film formed from a hydrocarbon and hydrides on the Si surface at low (< 900 °C) growth temperatures. It is shown that a system of macrodefects and a subsurface structure similar to porous silicon are formed under a carbide layer as a result of long-term growth of thick carbide layers. The presence of a solid solution transition layer between the carbide layer and the silicon substrate is manifested in the structure of luminescence spectra of studied structures in the near IR region. The most probable mechanisms of observed radiative transitions were established by analysing the temperature behavior of spectral lines and calculating the layer distribution of structures of light-excited non-equilibrium charge carriers.

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Funding

The final analysis of obtained results was funded by RFBR, project number  18-42-520062.

Author information

Authors and Affiliations

  1. Alekseev Nizhny Novgorod State Technical University, Nizhny Novgorod, Russia

    L. K. Orlov

  2. Institute for Physics of Microstructure, Russian Academy of Sciences, Nizhny Novgorod, Russia

    L. K. Orlov & Yu. N. Drozdov

  3. MERA Computer Company, Nizhny Novgorod, Russia

    N. L. Ivina

  4. Russian Presidential Academy of National Economy and Public Administration, Department of Informatics and Information Technologies, Nizhny Novgorod, Russia

    M. L. Orlov

  5. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia

    E. A. Steinman

  6. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

    V. I. Vdovin

Authors
  1. L. K. Orlov
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  2. V. I. Vdovin
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  3. Yu. N. Drozdov
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  4. M. L. Orlov
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  5. N. L. Ivina
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  6. E. A. Steinman
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Correspondence to L. K. Orlov.

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Russian Text © The Author(s), 2021, published in Zhurnal Strukturnoi Khimii, 2021, Vol. 62, No. 4, pp. 672-683.https://doi.org/10.26902/JSC_id71165

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Orlov, L.K., Vdovin, V.I., Drozdov, Y.N. et al. CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS. J Struct Chem 62, 630–640 (2021). https://doi.org/10.1134/S0022476621040156

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