Abstract
Diamonds synthesized in the Mg0.9–Ge0.1–C system at high pressure-high temperature (HPHT) conditions are investigated by the EPR and luminescence methods. A new GeV paramagnetic center with the spin S = 1 and D 3d symmetry is detected in the EPR spectra of the Ge-doped samples, along with the impurity nitrogen (Р1) and silicon-vacancy defect KUL1 (SiV0) centers. The investigation demonstrates that this new center has a double semi-vacancy structure with the germanium atom in the center. The studied GeV center is in a neutral charge state and is assigned to the 602 nm system in the photoluminescence spectra.
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Translated from Zhurnal Strukturnoi Khimii, Vol. 57, No. 5, pp. 1092-1094, June-July, 2016.
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Nadolinny, V.A., Komarovskikh, A.Y., Palyanov, Y.N. et al. EPR study of germanium-vacancy defects in diamonds. J Struct Chem 57, 1041–1043 (2016). https://doi.org/10.1134/S0022476616050280
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DOI: https://doi.org/10.1134/S0022476616050280