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X-ray diffraction study of Al-Si melts

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Abstract

X-ray diffraction is used to study Al-Si melts with a content of 0 at.%, 6 at.%, 10 at.%, 18 at.%, 21 at.%, 26 at.%, 35 at.%, 60 at.%, 80 at.%, and 100 at.% Si. The structural factors, atomic distribution curves, and parameters characterizing the immediate environment of atoms in the melts are calculated. The results are described using the microheterogeneous melt structure model near the liquidus temperature. According to the model, the melts contain microgroupings with the statistical atomic distribution that are similar in composition to the Al-6%Si melt and liquid silicon microgroupings. High-temperature studies indicate an increase in the structural homogeneity of the melts with increasing temperature due to the progressive metallization of interatomic bonds in the silicon microgroupings.

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Authors and Affiliations

  1. Chemistry Department, National Taras Shevchenko University of Kiev, Kiev, Ukraine

    V. P. Kazimirov, A. M. Yakovenko, A. S. Muratov, A. S. Roik & V. È. Sokol’skii

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  1. V. P. Kazimirov
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  2. A. M. Yakovenko
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  3. A. S. Muratov
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  4. A. S. Roik
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  5. V. È. Sokol’skii
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Correspondence to V. P. Kazimirov.

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Original Russian Text © 2013 V. P. Kazimirov, A. M. Yakovenko, A. S. Muratov, A. S. Roik, V. È. Sokol’skii.

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Translated from Zhurnal Strukturnoi Khimii, Vol. 54, Supplement 2, pp. S360–S367, 2013.

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Kazimirov, V.P., Yakovenko, A.M., Muratov, A.S. et al. X-ray diffraction study of Al-Si melts. J Struct Chem 54 (Suppl 2), 355–362 (2013). https://doi.org/10.1134/S0022476613080155

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  • DOI: https://doi.org/10.1134/S0022476613080155

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