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The use of crystallography for the studies of semiconductor materials

  • The Centenary of X-Ray Diffraction
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Abstract

This work presents a study of oriented layers on GaAs(001) surface. It also demonstrates the role of X-ray diffraction in this research. Crystallographic images are proved to be useful for the explanation of various properties of crystal-based systems.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

    Yu. N. Drozdov, V. M. Daniltsev & E. A. Vopilkin

Authors
  1. Yu. N. Drozdov
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  2. V. M. Daniltsev
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  3. E. A. Vopilkin
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Correspondence to Yu. N. Drozdov.

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Original Russian Text Copyright © 2012 by Yu. N. Drozdov, V. M. Daniltsev, E. A. Vopilkin

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Translated from Zhurnal Strukturnoi Khimii, Vol. 53, Supplement, pp. S39–S45, 2012.

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Drozdov, Y.N., Daniltsev, V.M. & Vopilkin, E.A. The use of crystallography for the studies of semiconductor materials. J Struct Chem 53 (Suppl 1), 35–42 (2012). https://doi.org/10.1134/S0022476612070050

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  • DOI: https://doi.org/10.1134/S0022476612070050

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