Abstract
This is the first in situ XPS study of the InAs oxidation kinetics in glow-discharge plasma in the atmosphere of O2 and CO2 gases and in a mixture of O2 and NF3 gases. Chemical composition of the oxide films produced by cathodic and anodic polarization of samples was examined. Main regularities and features of the oxide film formation on the InAs surface in the normal and dark glow discharge modes were revealed. Normal glow discharge in oxygen-containing plasma was shown to form bilayer oxide films on the InAs surface. The bottom layer with thickness of some nanometers, which consists of arsenic and indium oxides, forms at the initial oxidation steps, its thickness remaining virtually unchanged. The upper layer consists of Al2O3 produced by sputtering of cathode material; it serves as a barrier to oxygen diffusion, its thickness building up linearly with the treatment time in glow-discharge plasma. Chemical composition of the growing proper InAs oxide film and the stoichiometry of subsurface region of a semiconductor substrate strongly depend on the oxidation process parameters. The obtained regularities are discussed.
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Original Russian Text Copyright © 2011 by V. G. Kesler
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Translated from Zhurnal Strukturnoi Khimii, Vol. 52, Supplement, pp. S156–S164, 2011.
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Kesler, V.G. In situ XPS study of InAs oxidation in glow-discharge plasma. J Struct Chem 52 (Suppl 1), 153–160 (2011). https://doi.org/10.1134/S0022476611070201
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DOI: https://doi.org/10.1134/S0022476611070201