Abstract
The XPS (X-ray photoelectron spectroscopy) study of nickel oxide nanolayers obtained by magnetron sputtering of the metal and its subsequent oxidation in air at different temperatures (400°C and 1000°C) was performed. Silicon(100) was used as a substrate. Surface of the initial Ni/Si structure was shown to contain not only Ni metal, but also the NiO oxide. Annealing at 400°C results in a complete oxidation of the metal film. At a high-temperature annealing (1000°C), nickel interacts both with oxygen and silicon substrate to form NiSi silicide and a composite Ni-Si-O phase in transition layer. Electronconductivity of NiO films is determined by intercrystallite barriers. Activation energies of film electroconductivity in model gases (O2, Ar, H2) were found.
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Original Russian Text Copyright © 2011 by É. P. Domashevskaya, S. V. Ryabtsev, V. A. Terekhov, A. S. Len’shin, F. M. Chernyshov, A. T. Kazakov, and A. V. Sidashov
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Translated from Zhurnal Strukturnoi Khimii, Vol. 52, Supplement, pp. S119–S125, 2011.
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Domashevskaya, É.P., Ryabtsev, S.V., Terekhov, V.A. et al. XPS study of the oxidation of nanosize Ni/Si(100) films. J Struct Chem 52 (Suppl 1), 115–122 (2011). https://doi.org/10.1134/S002247661107016X
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DOI: https://doi.org/10.1134/S002247661107016X