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Structure and properties of films based on HfO2-Sc2O3 double oxide

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Abstract

The results of the investigation of the chemical constitution and structure of (HfO2) x (Sc2O3)1−x thin films are reported. The films are obtained by chemical vapor deposition (CVD) from hafnium 2,2,6,6-tetramethyl-3,5-heptandionate (Hf(thd)4) and scandium 2,2,6,6-tetramethyl-3,5-heptandionate (Sc(thd)3) coordination compounds. It is demonstrated by powder X-ray diffraction and infrared spectroscopy that depending on the scandium content in the films the structure is changed from monoclinic to cubic. Voltage-capacity dependences of test Al/(HfO2) x (Sc2O3)1−x /Si structures are used to calculate the dielectric constant of the films. For the films with the cubic structure it is found that k = 21, while for the films with the monoclinic structure k = 9.

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Authors and Affiliations

  1. A. V. Nikolaev Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia

    L. V. Yakovkina, T. P. Smirnova, V. O. Borisov, N. B. Morozova, V. N. Kichai & A. V. Smirnov

  2. Department of Information and Electronic Materials Engineering, College of Engineering, Paichai University, Daejeon, 302-735, Korea

    S. Jeong-Hwan

Authors
  1. L. V. Yakovkina
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  2. T. P. Smirnova
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  3. V. O. Borisov
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  4. S. Jeong-Hwan
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  5. N. B. Morozova
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  6. V. N. Kichai
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  7. A. V. Smirnov
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Correspondence to L. V. Yakovkina.

Additional information

Original Russian Text Copyright © 2011 by L. V. Yakovkina, T. P. Smirnova, V. O. Borisov, S. Jeong-Hwan, N. B. Morozova, V. N. Kichai, and A. V. Smirnov

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Translated from Zhurnal Strukturnoi Khimii, Vol. 52, No. 4, pp. 764–768, July–August, 2011.

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Yakovkina, L.V., Smirnova, T.P., Borisov, V.O. et al. Structure and properties of films based on HfO2-Sc2O3 double oxide. J Struct Chem 52, 743–747 (2011). https://doi.org/10.1134/S0022476611040147

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