Abstract
This paper presents a method for the analytical calculation of the flow velocity of the gas mixture and the concentration of the growth component during vapor-phase epitaxy in a reaction chamber with a rotating substrate holder disk. The concentration of the growth component is analyzed in relation to some epitaxy process parameters.
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Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 57, No. 4, pp. 74–83, July–August, 2016.
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Pankratov, E.L., Boldyrevskii, P.B. Convective diffusion from a gas phase to a rotating disk. J Appl Mech Tech Phy 57, 637–645 (2016). https://doi.org/10.1134/S0021894416040076
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DOI: https://doi.org/10.1134/S0021894416040076