Optically active (bright) and optically inactive (dark) quartet S = 3/2 spin color centers including a negatively charged Si vacancy have been identified in silicon carbide using high-frequency electron nuclear double resonance on the nuclei of the 13C isotope, enhanced by a tenfold increase in its content. The alignment of populations of spin levels is optically induced in a bright center promising for quantum technologies, whereas the populations of spin levels in a dark center, which is an isolated negatively charged Si vacancy \({\text{V}}_{{{\text{Si}}}}^{ - }\), correspond to a Boltzmann distribution and do not change under optical excitation.
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The study was supported by the Russian Science Foundation (project no. 23-12-00152, https://rscf.ru/project/23-12-00152/).
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Babunts, R.A., Uspenskaya, Y.A., Bundakova, A.P. et al. Identification of Optically Active Quartet Spin Centers Based on a Si Vacancy in SiC Promising for Quantum Technologies. Jetp Lett. 118, 629–636 (2023). https://doi.org/10.1134/S0021364023603135
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DOI: https://doi.org/10.1134/S0021364023603135