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Formation of Luminescent Structures in Thin a-Si:H–Er Films Irradiated by Femtosecond Laser Pulses

  • OPTICS AND LASER PHYSICS
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The process of intcorporation of erbium into silicon in a multilayer film consisting of Er and a-Si:H layers irradiated by femtosecond laser pulses is studied. The effect of the energy density of laser radiation on the phase composition and on the photoluminescence signal intensity from exposed regions is analyzed. The methods of thermal and femtosecond laser doping of films are compared. The results can be useful for the development of promising optoelectronic devices based on Si:Er structures.

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Funding

This work was supported by the Russian Foundation for Basic Research, project no. 18-29-20107 mk.

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Authors and Affiliations

  1. ITMO University, 197101, St. Petersburg, Russia

    A. O. Larin, E. I. Ageev, I. S. Mukhin & D. A. Zuev

  2. Alferov University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    L. N. Dvoretckaia, A. M. Mozharov & I. S. Mukhin

Authors
  1. A. O. Larin
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  2. E. I. Ageev
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  3. L. N. Dvoretckaia
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  4. A. M. Mozharov
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  6. D. A. Zuev
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Correspondence to E. I. Ageev.

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Translated by R. Tyapaev

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Larin, A.O., Ageev, E.I., Dvoretckaia, L.N. et al. Formation of Luminescent Structures in Thin a-Si:H–Er Films Irradiated by Femtosecond Laser Pulses. Jetp Lett. 114, 681–686 (2021). https://doi.org/10.1134/S0021364021230090

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  • DOI: https://doi.org/10.1134/S0021364021230090

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