Abstract
The response of a detector fabricated on a silicon substrate in the form of a metamaterial that is a 10 × 10 matrix of split rings containing superconductor-insulator-normal metal-insulator-superconductor tunnel structures to submillimeter wave radiation has been experimentally studied. At voltages below the superconducting gap, the electron temperature Te at the substrate temperature T ∼ 0.1 K is ∼0.23 K due to overheating by spurious radiation. At the substrate temperature T ∼ 0.3 K, the electron temperature is close to the substrate temperature Te ≈ T. In both cases, with increasing voltage, Te decreases due to electron cooling and reaches 0.19 K at a voltage corresponding to the maximum response. The response at T = 0.1 K is greater than that at T ∼ 0.3 K by a factor of 5–6. Thus, cooling of only electrons does not provide the same responsivity as cooling of the detector as a whole.
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22 February 2021
An Erratum to this paper has been published: https://doi.org/10.1134/S0021364020240108
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Acknowledgments
The samples were fabricated and studied using the unique scientific setup UNU no. 352529.
Funding
This work was supported by the Ministry of Science and Higher Education of the Russian Federation (state assignment nos. 0027-2019-0003 and 0030-2019-0003 for Kapitza Institute for Physical Problems and Kotelnikov Institute of Radio Engineering and Electronics, respectively).
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Russian Text © The Author(s), 2020, published in Pis’ma vZhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 111, No. 10, pp. 641–645.
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Gunbina, A.A., Lemzyakov, S.A., Tarasov, M.A. et al. Response of a SINIS Detector with Electron Cooling to Submillimeter-Wave Radiation. Jetp Lett. 111, 539–542 (2020). https://doi.org/10.1134/S0021364020100094
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DOI: https://doi.org/10.1134/S0021364020100094