Abstract
The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.
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Funding
This work was supported by the Russian Science Foundation (project no. 16-12-10041-P) and by the São Paulo Research Foundation (FAPESP, Brazil).
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Russian Text © The Author(s), 2020, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 111, No. 2, pp. 107–111.
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Yaroshevich, A.S., Kvon, Z.D., Gusev, G.M. et al. Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well. Jetp Lett. 111, 121–125 (2020). https://doi.org/10.1134/S0021364020020113
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DOI: https://doi.org/10.1134/S0021364020020113