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JETP Letters

, Volume 107, Issue 12, pp 794–797 | Cite as

Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

  • V. T. Dolgopolov
  • M. Yu. Melnikov
  • A. A. Shashkin
  • S.-H. Huang
  • C. W. Liu
  • S. V. Kravchenko
Condensed Matter

Abstract

We have experimentally studied the fractional quantum Hall effect in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers p = 1, 2, 3, and 4. Minima with p = 3 disappear in magnetic fields below 7 T, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors ν = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions.

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Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  • V. T. Dolgopolov
    • 1
  • M. Yu. Melnikov
    • 1
  • A. A. Shashkin
    • 1
  • S.-H. Huang
    • 2
    • 3
  • C. W. Liu
    • 2
    • 3
  • S. V. Kravchenko
    • 4
  1. 1.Institute of Solid State PhysicsRussian Academy of SciencesChernogolovkaRussia
  2. 2.Department of Electrical Engineering and Graduate Institute of Electronics EngineeringNational Taiwan UniversityTaipeiTaiwan
  3. 3.National Nano Device LaboratoriesHsinchuTaiwan
  4. 4.Physics DepartmentNortheastern UniversityBostonUSA

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