Abstract
It was shown in JETP Lett. 102, 508 (2015) that the intensity correlation function of the emission from a high-quality-factor semiconductor microcavity under resonant optical pumping exhibits an oscillatory behavior with an unexpectedly long oscillation period and a long decay time, which fall in the nanosecond range. A further investigation demonstrates that the origin of these oscillations is not related to the weak Rabi interaction between long-lived localized exciton states in the quantum well and the electromagnetic field of the microcavity mode. It proves that the semiconductor microcavity plays a secondary role in the observation of nonclassical light: it provides the spectral selection of the modes of the pump laser. We believe that intrinsic instabilities lead to the chaotic excitation of spiking in the laser modes under a constant operating current.
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Original Russian Text © A.A. Demenev, D.R. Domaretskii, A.L. Parakhonskii, M.V. Lebedev, 2017, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2017, Vol. 106, No. 8, pp. 528–533.
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Demenev, A.A., Domaretskii, D.R., Parakhonskii, A.L. et al. On the origin of nonclassical light generation upon resonant excitation of a GaAs semiconductor microcavity. Jetp Lett. 106, 549–554 (2017). https://doi.org/10.1134/S0021364017200073
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DOI: https://doi.org/10.1134/S0021364017200073