Abstract
The transport of traps in a dielectric after capture of holes in an electric field is considered with the inclusion of the two-band conduction. The distance covered by a trap with a trapped hole decreases exponentially with an increase in the electric field. A value of 3 × 10–15 cm2/(V s) has been determined for the mobility of traps with trapped holes in Si3N4.
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Original Russian Text © Yu.N. Novikov, 2017, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2017, Vol. 105, No. 10, pp. 605–609.
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Novikov, Y.N. Hole-stimulated transfer of traps in dielectrics. Jetp Lett. 105, 646–650 (2017). https://doi.org/10.1134/S0021364017100101
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DOI: https://doi.org/10.1134/S0021364017100101