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Conductance of a lateral p—n junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states

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Abstract

The conductance of a lateral p—n junction in two-dimensional HgTe structures with an inverted spectrum is measured. It is shown that Klein tunneling is rather inefficient in 8- to 10-nm-thick quantum wells and does not hinder the identification of the edge-state contribution to the conductance. The separation of the contributions from the p—n junction and the edge states is possible upon the simultaneous measurement of the resistance of the p—n junction regions in channels with substantially different widths.

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Authors and Affiliations

  1. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. Kovalevskoi 18, Yekaterinburg, 620137, Russia

    G. M. Min’kov & A. A. Sherstobitov

  2. Ural Federal University, ul. Mira 19, Yekaterinburg, 620000, Russia

    G. M. Min’kov, A. A. Sherstobitov, A. V. Germanenko & O. E. Rut

  3. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akedemika Lavrent’eva 13, Novosibirsk, 630090, Russia

    S. A. Dvoretskii & N. N. Mikhailov

Authors
  1. G. M. Min’kov
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  2. A. A. Sherstobitov
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  3. A. V. Germanenko
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  4. O. E. Rut
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  5. S. A. Dvoretskii
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  6. N. N. Mikhailov
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Corresponding author

Correspondence to G. M. Min’kov.

Additional information

Original Russian Text © G.M. Min’kov, A.A. Sherstobitov, A.V. Germanenko, O.E. Rut, S.A. Dvoretskii, N.N. Mikhailov, 2015, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2015, Vol. 101, No. 7, pp. 522–526.

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Min’kov, G.M., Sherstobitov, A.A., Germanenko, A.V. et al. Conductance of a lateral p—n junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states. Jetp Lett. 101, 469–473 (2015). https://doi.org/10.1134/S0021364015070115

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  • DOI: https://doi.org/10.1134/S0021364015070115

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