Abstract
Optical losses caused by the interaction of radiation with optically active Er3+ ions in epitaxial waveguide structures Si:Er/SOI have been directly measured. The cross section for the 4 I 13/2 → 4 I 15/2 radiative transition in the Er3+ ion has been estimated as σ300 K ∼ 8 × 10−19 cm2 at T = 300 K and σ10 K ∼ 10−17 cm2 at T = 10 K.
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Original Russian Text © K.E. Kudryavtsev, D.I. Kryzhkov, L.V. Krasil’nikova, D.V. Shengurov, V.B. Shmagin, B.A. Andreev, Z.F. Krasil’nik, 2014, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2014, Vol. 100, No. 12, pp. 913–918.
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Kudryavtsev, K.E., Kryzhkov, D.I., Krasil’nikova, L.V. et al. Absorption cross section for the 4 I 15/2 → 4 I 13/2 transition of Er3+ in Si:Er:O/SOI epitaxial layers. Jetp Lett. 100, 807–811 (2015). https://doi.org/10.1134/S0021364014240096
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DOI: https://doi.org/10.1134/S0021364014240096