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Terahertz intracenter photoluminescence of silicon with lithium at interband excitation

  • Optics and Laser Physics
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Abstract

Terahertz radiation has been revealed at interband photoexcitation of lithium-doped silicon crystals at liquid helium temperatures. It has been shown that the lines caused by optical transitions of electrons from the 2P excited states of lithium centers to the 1S(A 1) state of the impurity prevail in the radiation spectrum. The strong suppression of terahertz radiation associated with transitions to the lowest state of the donor 1S(E + T 2) as compared to radiation associated with transitions to the 1S(A 1) state is explained by the reabsorption of radiation. The radiation spectrum also includes weaker terahertz lines, which can be attributed to the intracenter transitions in donors that are caused by Li-O complexes. The radiation spectrum also exhibits lines at ∼12.7 and ∼15.3 meV, which are possibly due to intraexcitonic radiative transitions and transitions from continuum to the ground state of excitons.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. V. Andrianov, A. O. Zakhar’in & A. V. Bobylev

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Akademicheskaya 7, Afonino, Nizhni Novgorod region, 607680, Russia

    R. Kh. Zhukavin & V. N. Shastin

  3. Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia

    V. N. Shastin

  4. Leibniz Institute for Crystal Growth, 12489, Berlin, Germany

    N. V. Abrosimov

  5. St. Petersburg State Polytechnic University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    A. V. Bobylev

Authors
  1. A. V. Andrianov
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  2. A. O. Zakhar’in
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  3. R. Kh. Zhukavin
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  4. V. N. Shastin
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  5. N. V. Abrosimov
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  6. A. V. Bobylev
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Correspondence to A. V. Andrianov.

Additional information

Original Russian Text © A.V. Andrianov, A.O. Zakhar’in, R.Kh. Zhukavin, V.N. Shastin, N.V. Abrosimov, A.V. Bobylev, 2014, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2014, Vol. 100, No. 12, pp. 876–880.

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Andrianov, A.V., Zakhar’in, A.O., Zhukavin, R.K. et al. Terahertz intracenter photoluminescence of silicon with lithium at interband excitation. Jetp Lett. 100, 771–775 (2015). https://doi.org/10.1134/S0021364014240035

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  • DOI: https://doi.org/10.1134/S0021364014240035

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