Abstract
High-perfection artificial Ge/Si substrates are created by hot-wire chemical-vapor deposition, and InGaAs/GaAs/AlGaAs quantum-well heterostructures are grown on these substrates by metalorganic chemical-vapor deposition. Photoluminescence spectra of these heterostructures are investigated. Stimulated emission in the near-infrared spectral range under optical pumping is observed. Threshold pump powers for the onset of stimulated emission are determined and the variation of the emission spectra with the optical-pump power is examined.
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Original Russian Text © V.Ya. Aleshkin, N.V. Dikareva, A.A. Dubinov, S.A. Denisov, Z.F. Krasil’nik, K.E. Kudryavtsev, S.A. Matveev, S.M. Nekorkin, V.G. Shengurov, 2014, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2014, Vol. 100, No. 12, pp. 900–903.
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Aleshkin, V.Y., Dikareva, N.V., Dubinov, A.A. et al. Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate. Jetp Lett. 100, 795–797 (2015). https://doi.org/10.1134/S0021364014240023
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DOI: https://doi.org/10.1134/S0021364014240023