Abstract
The effect of spin injection on the spin resonance associated with itinerant electrons in a nonmagnetic semi-conductor has been studied within the phenomenological approach. The power absorbed under the resonance conditions has been analyzed as a function of the frequency, effective g-factor, and magnetic field direction. It is shown that the power absorbed by the spin-polarized charge carriers under the resonance conditions can provide a tool for studying the spin injection.
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Original Russian Text © V.V. Ustinov, N.G. Bebenin, I.I. Lyapilin, 2014, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2014, Vol. 99, No. 6, pp. 375–377.
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Ustinov, V.V., Bebenin, N.G. & Lyapilin, I.I. Spin resonance associated with itinerant electrons affected by the injected spin current. Jetp Lett. 99, 327–328 (2014). https://doi.org/10.1134/S0021364014060125
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DOI: https://doi.org/10.1134/S0021364014060125