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Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots

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Abstract

Band alignment of heterostructures with pseudomorphic GaSb1 − x P x /GaP self-assembled quantum dots (SAQDs) lying on a wetting layer was studied. Coexistence of type-I and type-II band alignment was found within the same heterostructure. Wetting layer has band alignment of type-I with the lowest electronic state belonging to the X XY valley of GaSb1 − x P x conduction band, in contrast to SAQDs, which have band alignment of type-II, independently of the ternary alloy composition x. It is shown that type-I-type-II transition is a result of GaP matrix deformation around the SAQD.

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Authors and Affiliations

  1. Russian Academy of Sciences, Novosibirsk, 630090, Russia

    D. S. Abramkin, M. A. Putyato, A. K. Gutakovskii & T. S. Shamirzaev

  2. Novosibirsk State Technical University, Novosibirsk, 630092, Russia

    V. T. Shamirzaev

  3. Novosibirsk State University, Novosibirsk, 630090, Russia

    T. S. Shamirzaev

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  1. D. S. Abramkin
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  2. V. T. Shamirzaev
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  3. M. A. Putyato
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  4. A. K. Gutakovskii
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  5. T. S. Shamirzaev
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Correspondence to D. S. Abramkin.

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Abramkin, D.S., Shamirzaev, V.T., Putyato, M.A. et al. Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots. Jetp Lett. 99, 76–81 (2014). https://doi.org/10.1134/S0021364014020027

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  • DOI: https://doi.org/10.1134/S0021364014020027

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