Skip to main content
SpringerLink
Log in

Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator

  • Condensed Matter
  • Published:
JETP Letters Aims and scope Submit manuscript

Abstract

We report on theoretical study of the bound electron states induced by a ferromagnetic delta-layer embedded into a narrow-band-gap semiconductor of the Bi2Se3-type which is a three-dimensional topological insulator with large spin-orbit coupling. We make use of an effective Hamiltonian taking into account the inverted band structure of the semiconductor host at the Γ point and describe the properties of the in-gap bound states: energy spectrum, characteristic length and spin polarization. We highlight a role of these states for a magnetic proximity effect in digital magnetic heterostructures based on the Bi2Se3-type semiconductors.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).

    Article  ADS  Google Scholar 

  2. X.-L. Qi and S.-C. Zhang, Rev. Mod. Phys. 83, 1057 (2011).

    Article  ADS  Google Scholar 

  3. X.-L. Qi, T. L. Hughes, and S.-C. Zhang, Phys. Rev. B 78, 195424 (2008).

    Article  ADS  Google Scholar 

  4. I. Garate and M. Franz, Phys. Rev. Lett. 104, 146802 (2010).

    Article  ADS  Google Scholar 

  5. R. Yu, W. Zhang, H.-J. Zhang, et al., Science 329, 61 (2010).

    Article  ADS  Google Scholar 

  6. T. Fujita, M. B. A. Jalil, and S. G. Tan, Appl. Phys. Express 4, 094201 (2011).

    Article  ADS  Google Scholar 

  7. Y. L. Chen, J.-H. Chu, J. G. Analytis, et al., Science 329, 659 (2010).

    Article  ADS  Google Scholar 

  8. L. A. Wray, S.-Y. Xu, Y. Xia, et al., Nature Phys. 7, 32 (2011).

    Article  ADS  Google Scholar 

  9. I. Vobornik, U. Manju, J. Fujii, et al., Nano Lett. 11, 4079 (2011).

    Article  ADS  Google Scholar 

  10. W. K. Tse and A. H. MacDonald, Phys. Rev. Lett. 105, 057401 (2010).

    Article  ADS  Google Scholar 

  11. K. Kawakami, E. Johnston-Halperin, L. F. Chen, et al., Appl. Phys. Lett. 77, 2379 (2000).

    Article  ADS  Google Scholar 

  12. T. Jungwirth, J. Sinova, J. Mašek, et al., Rev. Mod. Phys. 78, 809 (2006).

    Article  ADS  Google Scholar 

  13. Z. Zhou, Y.-J. Chien, and C. Uher, Phys. Rev. B 74, 224418 (2006).

    Article  ADS  Google Scholar 

  14. Z. Zhou, Y.-J. Chien, and C. Uher, Appl. Phys. Lett. 87, 112503 (2005).

    Article  ADS  Google Scholar 

  15. Z. Salman, E. Pomjakushina, V. Pomjakushin, et al., arXiv: 1203.4850, cond-mat (2012).

  16. H. Zhang, C.-X. Liu, X.-L. Qi, et al., Nature Phys. 5, 438 (2009); C.-X. Liu, X.-L. Qi, H. Zhang, et al., Phys. Rev. B 82, 045122 (2010).

    Article  ADS  Google Scholar 

  17. S. Caprara, V. V. Tugushev, P. M. Echenique, and E. V. Chulkov, Eur. Phys. Lett. 85, 27006 (2009); S. Caprara, V. V. Tugushev, and E. V. Chulkov, Phys. Rev. B 84, 085311 (2011).

    Article  ADS  Google Scholar 

  18. V. N. Men’shov, V. V. Tugushev, S. Caprara, et al., Phys. Rev. B 80, 035315 (2009); V. N. Men’shov, V. V. Tugushev, P. M. Echenique, et al., Phys. Rev. B 78, 024438 (2008).

    Article  ADS  Google Scholar 

  19. W.-Y. Shan, H.-Z. Lu, and S.-Q. Shen, New J. Phys. 12, 043048 (2010).

    Article  ADS  Google Scholar 

  20. B. Zhou, H.-Z. Lu, R.-L. Chu, et al., Phys. Rev. Lett. 101, 246807 (2008).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. National Research Centre Kurchatov Institute, Moscow, 123182, Russia

    V. N. Men’shov & V. V. Tugushev

  2. Tomsk State University, Tomsk, 634050, Russia

    V. N. Men’shov & V. V. Tugushev

  3. Departamento de Fisica de Materiales, Facultad de Ciencias Quimicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC, Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080, San Sebastián, Basque Country, Spain

    E. V. Chulkov

Authors
  1. V. N. Men’shov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. V. Tugushev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. E. V. Chulkov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. N. Men’shov.

Additional information

The article is published in the original.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Men’shov, V.N., Tugushev, V.V. & Chulkov, E.V. Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator. Jetp Lett. 96, 445–451 (2012). https://doi.org/10.1134/S0021364012190113

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0021364012190113

Keywords

Search

Navigation