Abstract
On the basis of relativistic ab initio calculations, we show that both Te- and I-terminated surfaces of the polar layered semiconductor BiTeI hold surface states with a giant Rashba-type spin splitting. The Te-terminated surface state has nearly isotropic free-electron-like dispersion with a positive effective mass, which along with the giant spin splitting makes BiTeI fulfilling the requirements demanded by many semiconductor-spintronics applications. The I-terminated surface state with its negative effective-mass dispersion reproduces nicely the situation with the Rashba-split surface state on surfaces of noble-metal based surface alloys. The crucial advantage of BiTeI as compared with the surface alloys is the location of the I-terminated surface state in a quite wide band gap.
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Eremeev, S.V., Nechaev, I.A. & Chulkov, E.V. Giant Rashba-type spin splitting at polar surfaces of BiTeI. Jetp Lett. 96, 437–444 (2012). https://doi.org/10.1134/S0021364012190071
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DOI: https://doi.org/10.1134/S0021364012190071