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Novel self-assembled quantum dots in the GaSb/AlAs heterosystem

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Abstract

Novel self-assembled quantum dots (QDs) in the GaSb/AlAs heterosystem were obtained and studied by means of transmission electron microscopy, steady-state and transient photoluminescence. A strong inter-mixing of both III and V group materials results in the fabrication of quaternary alloy QDs in the AlAs matrix. The QDs have atypical energy structure: band alignment of type I with the lowest electronic state at the indirect X minimum of the conduction band.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    T. S. Shamirzaev, D. S. Abramkin, A. K. Gutakovskii & M. A. Putyato

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  1. T. S. Shamirzaev
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  2. D. S. Abramkin
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  3. A. K. Gutakovskii
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  4. M. A. Putyato
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Correspondence to T. S. Shamirzaev.

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Shamirzaev, T.S., Abramkin, D.S., Gutakovskii, A.K. et al. Novel self-assembled quantum dots in the GaSb/AlAs heterosystem. Jetp Lett. 95, 534–536 (2012). https://doi.org/10.1134/S0021364012100104

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  • DOI: https://doi.org/10.1134/S0021364012100104

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