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Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(Zr x Ti1 − x )O3 ferroelectric substrate

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Abstract

A numerical model has been proposed to explain the antihysteresis behavior of the resistivity of graphene on a Pb(Zr x Ti1 − x )O3 ferroelectric substrate with a change in the gate voltage. The model takes into account the screening of the electric field in the substrate by electrons trapped in states connected with the graphene-ferroelectric interface and describes the previously obtained experimental dependences. The estimates can be important for creating elements of new-generation energy-independent memory using two stable resistivity values that appear in the antihysteresis effect; logical 0 and 1 are assigned to these two values.

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Authors and Affiliations

  1. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, 03039, Ukraine

    M. V. Strikha

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  1. M. V. Strikha
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Correspondence to M. V. Strikha.

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Original Russian Text © M.V. Strikha, 2012, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2012, Vol. 95, No. 4, pp. 216–218.

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Strikha, M.V. Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(Zr x Ti1 − x )O3 ferroelectric substrate. Jetp Lett. 95, 198–200 (2012). https://doi.org/10.1134/S002136401204008X

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  • DOI: https://doi.org/10.1134/S002136401204008X

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