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Influence of electron localization on the spin dephasing anisotropy in bias GaAs/AlGaAs coupled quantum wells

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Abstract

Electron spin dephasing anisotropy is studied in GaAs/AlGaAs coupled quantum wells by means of a timeresolved Kerr rotation technique. It is found that the spin dephasing rate is strongly dependent on magnetic field and is significantly anisotropic in the quantum well plane. The presented theoretical model describes the experimental results by taking into account both the electron g-factor spreading and the irreversible electron spin relaxation which are caused by the electron localization. The suggested theoretical description is in a good agreement with experimental data.

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Authors and Affiliations

  1. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia

    A. V. Sekretenko & A. V. Larionov

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  1. A. V. Sekretenko
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  2. A. V. Larionov
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Correspondence to A. V. Larionov.

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Sekretenko, A.V., Larionov, A.V. Influence of electron localization on the spin dephasing anisotropy in bias GaAs/AlGaAs coupled quantum wells. Jetp Lett. 94, 853–857 (2012). https://doi.org/10.1134/S0021364011240076

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  • DOI: https://doi.org/10.1134/S0021364011240076

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