Abstract
The existence of the antibonding ground state of holes in artificial molecules, which are formed by the vertically coupled Ge/Si quantum dots, has been proved experimentally. This phenomenon is absent in natural molecules and double quantum dots containing electrons. It is a consequence of spin-orbit interaction and deformation effects in the valence band of vertically aligned quantum dots.
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Original Russian Text © A.I. Yakimov, V.A. Timofeev, A.I. Nikiforov, A.V. Dvurechenskii, 2011, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2011, Vol. 94, No. 10, pp. 806–810.
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Yakimov, A.I., Timofeev, V.A., Nikiforov, A.I. et al. Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots. Jetp Lett. 94, 744–747 (2012). https://doi.org/10.1134/S0021364011220127
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DOI: https://doi.org/10.1134/S0021364011220127