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Pressure-induced metamagnetic transition in the Cd0.7Mn0.3GeAs2 ferromagnetic semiconductor

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Abstract

The magnetic susceptibility χ/χ0 and the longitudinal Δρ zz 0 and transverse Δρ xx 0 magnetoresistances have been measured as functions of the hydrostatic pressure P ≤ 7 GPa at room temperature in the high-temperature ferromagnetic semiconductor Cd0.7Mn0.3GeAs2 with a chalcopyrite structure and the Curie temperature T c = 355 K. A pressure-induced metamagnetic transition from the low-magnetization state to the high-magnetization state has been observed in Cd0.7Mn0.3GeAs2 near the magnetic ordering temperature. This transition is accompanied by the hysteresis of the magnetic susceptibility and magnetoresistance.

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Author information

Correspondence to R. K. Arslanov.

Additional information

Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, R.K. Arslanov, T.R. Arslanov, U.Z. Zalibekov, V.M. Novotortsev, S.F. Marenkin, 2010, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2010, Vol. 91, No. 9, pp. 524–526.

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Mollaev, A.Y., Kamilov, I.K., Arslanov, R.K. et al. Pressure-induced metamagnetic transition in the Cd0.7Mn0.3GeAs2 ferromagnetic semiconductor. Jetp Lett. 91, 478–480 (2010). https://doi.org/10.1134/S0021364010090092

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Keywords

  • JETP Letter
  • Pressure Dependence
  • Structural Phase Transition
  • Ferromagnetic Semiconductor
  • Metamagnetic Transition