Abstract
The microscopic nature of the selective interaction of iodine with an As- and Ga-stabilized GaAs(001) surface has been investigated by the photoelectron emission and ab initio calculations. The adsorption of iodine on the Ga-stabilized (4 × 2)/c(8 × 2) surface leads to the formation of the prevailing chemical bond with gallium atoms; to a significant redistribution of the electron density between the surface Ga and As atoms; and, as a result, to a decrease in their binding energy. Iodine on the As-stabilized (2 × 4)/c(2 × 8) surface forms a bond predominantly with surface arsenic atoms. Such a selective interaction of iodine with the reconstructed surfaces gives rise to the etching of the Ga-stabilized surface and the passivation of the As-stabilized surface; this explains the layer-by-layer (“digital”) etching of GaAs(001) controlled by the reconstruction transitions on this surface.
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Original Russian Text © O.E. Tereshchenko, S.V. Eremeev, A.V. Bakulin, S.E. Kulkova, 2010, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2010, Vol. 91, No. 9, pp. 511–516.
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Tereshchenko, O.E., Eremeev, S.V., Bakulin, A.V. et al. Reconstruction dependence of the etching and passivation of the GaAs(001) surface. Jetp Lett. 91, 466–470 (2010). https://doi.org/10.1134/S0021364010090079
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DOI: https://doi.org/10.1134/S0021364010090079