Abstract
The transport and magnetic properties of Mn x Si1 − x films with a high (x ≈ 0.35) content of Mn produced by laser deposition at growth temperatures of 300–350°C have been studied in a temperature range of 5–300 K in magnetic fields of up to 2.5 T. The films exhibit a hole-type metallic conductivity and a relatively weak change of magnetization in a temperature range of 50–200 K. An anomalous Hall effect with an essentially hysteretic behavior from 50 K up to ≈230 K has been discovered. The properties of the films are explained by the two-phase model, in which ferromagnetic clusters containing interstitial Mn ions with a localized magnetic moment are embedded in the matrix of a weak band MnSi2 − x (x ≈ 0.3) type ferromagnet with delocalized spin density.
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Original Russian Text © S.N. Nikolaev, B.A. Aronzon, V.V. Ryl’kov, V.V. Tugushev, E.S. Demidov, S.A. Levchuk, V.P. Lesnikov, V.V. Podol’skii, R.R. Gareev, 2009, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 89, No. 12, pp. 707–712.
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Nikolaev, S.N., Aronzon, B.A., Ryl’kov, V.V. et al. Anomalous Hall effect in highly Mn-Doped silicon films. Jetp Lett. 89, 603–608 (2009). https://doi.org/10.1134/S0021364009120030
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DOI: https://doi.org/10.1134/S0021364009120030