Abstract
The electronic structure of segmented nanotubes composed of the alternating layers of (5,5) and (9,0) BN and SiC nanotubes in armchair and zigzag configurations, which differed in the orientation of the chemical bonds in the segments and the nature of the bonds (Si-N and B-C or Si-B and N-C) at the boundaries of BN and SiC regions, has been calculated using the linearized augmented cylindrical wave method. The calculations have been performed using the local density functional and the muffin-tin approximation for the electronic potential. It has been found that depending on the bonds at the segment boundaries, the (5,5) BN/SiC nanotubes are semiconductors with the energy gap E g of 1 to 3 eV, whereas the (9,0) BN/SiC nanotubes exhibited a metal, semimetal, or semiconductor (E g ∼ 1 eV) type of band structures.
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Original Russian Text © A.S. Romanov, A.A. Lisenko, P.M. Silenko, P.N. D’yachkov, 2009, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 89, No. 11, pp. 660–664.
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Romanov, A.S., Lisenko, A.A., Silenko, P.M. et al. Electronic structure of SiC/BN composite segmented nanotubes. Jetp Lett. 89, 558–562 (2009). https://doi.org/10.1134/S0021364009110071
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DOI: https://doi.org/10.1134/S0021364009110071