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Multiphonon mechanism of the ionization of traps in Al2O3: Experiment and numerical simulation

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Abstract

Charge transfer in Al2O3 has been investigated experimentally and theoretically. The experimental results are in qualitative agreement with the theory of the multiphonon ionization of deep centers. The thermal (W T = 1.5 eV) and optical (W opt = 3.0 eV) energies of the deep centers have been determined. It has been found that the experimental data are unsatisfactorily described by the Pool-Frenkel mechanism, which provides a non-physically small frequency factor and anomalously large effective tunneling mass.

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References

  1. A. I. Kingon, J.P. Maria, and S. K. Streiffer, Nature 406, 1032 (2000).

    Article  Google Scholar 

  2. J. Robertson, Eur. Phys. J. Appl. Phys. 28, 265 (2004).

    Article  ADS  Google Scholar 

  3. V. V. Afanas’ev, A. Stesmans, and W. Tsai, Appl. Phys. Lett. 82, 245 (2003).

    Article  ADS  Google Scholar 

  4. S. S. Shaimeev, V. A. Gritsenko, K. Kukli, et al., Micro-electron. Reliab. 47, 36 (2007).

    Article  Google Scholar 

  5. K. Kukli, M. Ritala, and M. Leskela, J. Vac. Sci. Technol. A 15, 2214 (1997).

    Article  ADS  Google Scholar 

  6. V. A. Gritsenko, K. A. Nasyrov, Yu. N. Novikov, et al., SolidState Electron. 47, 1651 (2003).

    Article  ADS  Google Scholar 

  7. Y. Y. Chen, C. H. Chien, and J. C. Lou, IEEE Electron Device Lett. 24, 503 (2003).

    Article  ADS  Google Scholar 

  8. C.H. Lee, K.C. Park, and K. Kim, Appl. Phys. Lett. 87, 073510 (2005).

    Google Scholar 

  9. C.H. Lee, S.H. Hur, Y.C. Shin, et al., Appl. Phys. Lett. 86, 152908 (2005).

  10. M. Lisansky, A. Heiman, M. Koler, et al., Appl. Phys. Lett. 89, 153506 (2006).

  11. X. Wang and D.L. Kwong, IEEE Trans. Electron Devices 53, 78 (2005).

    Article  ADS  Google Scholar 

  12. J. Kolodzey, E. Ahmrd, T. N. Adam, et al., IEEE Trans. Electron Device 47, 121 (2000).

    Article  ADS  Google Scholar 

  13. M. Specht, M. Stadele, S. Jakschik, and U. Sroder, Appl. Phys. Lett. 84, 3076 (2004).

    Article  ADS  Google Scholar 

  14. S. D. Ganichev, E. Ziemann, and W. Prettl, Phys. Rev. B 61, 10361 (2000).

    Google Scholar 

  15. S. MakramEbeid and M. Lannoo, Phys. Rev. B 25, 6406 (1982).

    Article  ADS  Google Scholar 

  16. V. N. Abakumov, V. I. Perel, and I. N. Yassievich, in Modern Problems in Condensed Matter Sciences, Ed. by V. M. Agranovich and A. A. Maradudin (Amsterdam, 1991), vol. 33.

  17. A. V. Vishnykov, Y. N. Novikov, V. A. Gritsenko, and K. A. Nasyrov, Solid State Electron. 53, 251 (2009).

    Article  ADS  Google Scholar 

  18. K. A. Nasyrov, V. A. Gritsenko, Yu. N. Novikov, et al., Appl. Phys. 96, 4293 (2004).

    Article  Google Scholar 

  19. K. A. Nasyrov, Yu. N. Novikov, V. A. Gritsenko, et al., Pis’ma Zh. Eksp. Teor. Fiz. 77, 455 (2003) [JETP Lett. 77, 385 (2003)].

    Google Scholar 

  20. K. A. Nasyrov, V. A. Gritsenko, and M. K. Kim, IEEE Electron Dev. Lett. 23, 336 (2002).

    Article  ADS  Google Scholar 

  21. D. V. Gritsenko, S. S. Shaimeev, M. A. Lamin, et al., Pis’ma Zh. Eksp. Teor. Fiz. 81, 721 (2005) [JETP Lett. 81, 587 (2005)].

    Google Scholar 

  22. Ya. I. Frenkel’, Zh. Eksp. Teor. Fiz. 8, 1292 (1938).

    Google Scholar 

  23. H. Bachhofer, R. Reisinger, E. Bertangnolli, and H. von Philipsborn, J. Appl. Phys. 89, 2791 (2001).

    Article  ADS  Google Scholar 

  24. V. A. Gritsenko, E. E. Meerson, and Y. N. Morokov, Phys. Rev. 57, R2081 (1998).

    Google Scholar 

  25. S. Miyazaki, Y. Ihara, and M. Hirose, Phys. Rev. Lett. 59, 125 (1987).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    Yu. N. Novikov & V. A. Gritsenko

  2. Institute of Automatics and Electrometry, Siberian Branch, Russian Academy of Sciences, Universitetskiĭ pr. 1, Novosibirsk, 630090, Russia

    K. A. Nasyrov

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  1. Yu. N. Novikov
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  2. V. A. Gritsenko
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  3. K. A. Nasyrov
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Correspondence to Yu. N. Novikov.

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Original Russian Text © Yu.N. Novikov, V.A. Gritsenko, K.A. Nasyrov, 2009, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 89, No. 10, pp. 599–602.

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Novikov, Y.N., Gritsenko, V.A. & Nasyrov, K.A. Multiphonon mechanism of the ionization of traps in Al2O3: Experiment and numerical simulation. Jetp Lett. 89, 506–509 (2009). https://doi.org/10.1134/S0021364009100075

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  • DOI: https://doi.org/10.1134/S0021364009100075

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