Abstract
A nonmonotonic behavior of band bending φ S as a function of cesium coverage ϑ on the Cs/GaAs(001) surface is observed in the form of several maxima and minima. This behavior indicates the formation of the quasi-discrete spectrum of the adatom-induced electronic surface states. The hysteresis of the φ S (ϑ) dependence under adsorption and subsequent thermodesorption of cesium indicates the metastability of the Cs/GaAs(001) system.
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Original Russian Text © A.G. Zhuravlev, V.L. Alperovich, 2008, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2008, Vol. 88, No. 9, pp. 702–706.
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Zhuravlev, A.G., Alperovich, V.L. Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface. Jetp Lett. 88, 611–615 (2008). https://doi.org/10.1134/S0021364008210145
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DOI: https://doi.org/10.1134/S0021364008210145