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Nonlinear refraction in nanocrystalline silicon carbide films

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Abstract

Nonlinear refraction in nanocrystalline SiC films, which have been obtained using the method of direct deposition of carbon and silicon ions with an energy of 100 eV at substrate temperatures from 900 to 1150°C, has been investigated. It has been shown that the films exhibit a large third-order nonlinear susceptibility χ (3) ∼ 10−6 esu (at λ = 1064 nm and τ p = 10 ns).

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 144, Kiev, 03028, Ukraine

    A. A. Borshch, M. S. Brodyn, V. I. Volkov, V. I. Rudenko & V. R. Lyakhovetskii

  2. Institute of Single Crystals, National Academy of Sciences of Ukraine, Kharkov, 61001, Ukraine

    V. A. Semenov & V. M. Puzikov

Authors
  1. A. A. Borshch
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  2. M. S. Brodyn
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  3. V. I. Volkov
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  4. V. I. Rudenko
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  5. V. R. Lyakhovetskii
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  6. V. A. Semenov
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  7. V. M. Puzikov
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Corresponding author

Correspondence to V. I. Volkov.

Additional information

Original Russian Text © A.A. Borshch, M.S. Brodyn, V.I. Volkov, V.I. Rudenko, V.R. Lyakhovetskii, V.A. Semenov, V.M. Puzikov, 2008, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2008, Vol. 88, No. 6, pp. 442–444.

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Borshch, A.A., Brodyn, M.S., Volkov, V.I. et al. Nonlinear refraction in nanocrystalline silicon carbide films. Jetp Lett. 88, 386–388 (2008). https://doi.org/10.1134/S0021364008180094

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  • DOI: https://doi.org/10.1134/S0021364008180094

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