Abstract
Atomically smooth CaF2 and BaF2 layers have been sequentially grown on Si(111) substrates by molecular beam epitaxy. Pore macrodefects have been revealed at the points of the action of an electron beam from a diffractometer when analyzing the crystal structure of the surface during the growth with the subsequent observation using atomic force microscopy. The formation of these macrodefects is associated with the decomposition of fluorides by high-energy electrons, which is accompanied by the desorption of fluorine and the drift current of positive ions from the electron charge drains.
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Original Russian Text © S.P. Suprun, D.V. Shcheglov, 2008, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2008, Vol. 88, No. 6, pp. 421–425.
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Suprun, S.P., Shcheglov, D.V. Effect of an electron beam on CaF2 and BaF2 epitaxial layers on Si. Jetp Lett. 88, 365–369 (2008). https://doi.org/10.1134/S0021364008180057
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DOI: https://doi.org/10.1134/S0021364008180057