Abstract
The electron-hole liquid has been found in strained SiGe thin films of Si/Si1−x Gex/Si heterostructures. The density and binding energy of the electron-hole liquid have been determined. Owing to the presence of internal strains in the SiGe layer, the density and binding energy are significantly smaller than the respective quantities for the electron-hole liquid in a bulk single crystal of the solid solution of the same composition. The critical temperature of the transition from the exciton gas to the electron-hole liquid is estimated using the experimental data. The Mott transition (from the exciton gas to electron-hole plasma) occurs above the critical temperatures for high excitation intensities.
Similar content being viewed by others
References
L. V. Keldysh, in Proceedings of 9th International Conference on the Physics of Semiconductors, Moscow, 1968 (Nauka, Leningrad, 1969), p. 1384.
T. M. Rice, J. C. Hensel, T. G. Phillips, and G. A. Thomas, The Electron Hole Liquid in Semiconductors (Academic, New York, 1977; Mir, Moscow, 1980), Solid State Phys., Vol. 32, No. 4.
The Electron-Hole Droplets in Semiconductors, Ed. by C. D. Jeffries and L. V. Keldysh (North-Holland, Amsterdam, 1983), in Modern Problems in Condensed Matter Sciences, Vol. 6; L. V. Keldysh and N. N. Sibeldin, in Modern Problems in Condensed Matter Sciences, Ed. by W. Eisenmenger and A. A. Kaplyanskii (North-Holland, Amsterdam, 1986), Vol. 16, p. 455.
S. G. Tikhodeev, Usp. Fiz. Nauk 145, 3 (1985) [Sov. Phys. Usp. 28, 1 (1985)].
M. Tajima and S. Ibuka, J. Appl. Phys. 84, 2224 (1998).
N. Pauc, V. Calvo, J. Eymery, et al., Phys. Rev. Lett. 92, 236802-1 (2004).
N. Pauc, V. Calvo, J. Eymery, et al., Phys. Rev. B 72, 205324 (2005).
C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986).
L. Yang, J. R. Watling, R. C. W. Wilkins, et al., Semicond. Sci. Technol. 19, 1174 (2004).
N. F. Mott, Metal-Insulator Transitions (Taylor and Francis, London, 1974; Nauka, Moscow, 1979), p. 150.
Author information
Authors and Affiliations
Additional information
Original Russian Text © T.M. Burbaev, E.A. Bobrik, V.A. Kurbatov, M.M. Rzaev, N.N. Sibel’din, V.A. Tsvetkov, F. Schäffier, 2007, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 85, No. 7, pp. 410–413.
Rights and permissions
About this article
Cite this article
Burbaev, T.M., Bobrik, E.A., Kurbatov, V.A. et al. Electron-hole liquid in strained SiGe layers of silicon heterostructures. Jetp Lett. 85, 331–334 (2007). https://doi.org/10.1134/S0021364007070065
Received:
Issue Date:
DOI: https://doi.org/10.1134/S0021364007070065