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Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well

  • Condensed Matter
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Abstract

The dependence of the heavy-hole cyclotron mass in GaAs(001) quantum wells on the 2D-hole density has been measured by the optical detection method for resonance microwave by-absorption. A significant increase (almost doubling) has been observed in the cyclotron mass of heavy holes with an increase in the charge carrier density from 1.2 × 1010 cm−2 to 1.3 × 1011 cm−2.

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Original Russian Text © M.N. Khannanov, I.V. Kukushkin, S.I. Gubarev, J. Smet, K. von Klitzing, W. Wegscheider, C. Gerl, 2007, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 85, No. 5, pp. 294–297.

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Khannanov, M.N., Kukushkin, I.V., Gubarev, S.I. et al. Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well. Jetp Lett. 85, 242–245 (2007). https://doi.org/10.1134/S0021364007050050

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  • DOI: https://doi.org/10.1134/S0021364007050050

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