Abstract
The energies of odd excited states of shallow acceptors in uniaxially compressed germanium have been calculated as functions of strain and oscillator strengths for transitions from the ground state of an impurity. The calculation allows both a detailed interpretation of the lines previously observed in the photoconductivity and absorption spectra of uniaxially compressed germanium and description of the evolution of these lines with increasing the strain. It has been shown that the photoconductivity of uniaxially compressed germanium depends on the polarization of incident electromagnetic radiation.
Similar content being viewed by others
References
I. V. Altukhov, M. S. Kagan, and V. P. Sinis, Pis’ma Zh. Éksp. Teor. Fiz. 47, 136 (1988) [JETP Lett. 47, 164 (1988)].
I. V. Altukhov, M. S. Kagan, K. A. Korolev, et al., Zh. Éksp. Teor. Fiz. 101, 756 (1992) [Sov. Phys. JETP 74, 404 (1992)].
V. Ya. Aleshkin, V. I. Gavrilenko, and D. V. Kozlov, Zh. Éksp. Teor. Fiz. 120, 1495 (2001) [JETP 93, 1296 (2001)].
I. V. Altukhov, M. S. Kagan, K. A. Korolev, et al., Zh. Éksp. Teor. Fiz. 115, 89 (1999) [JETP 88, 51 (1999)].
M. A. Odnoblyudov, A. A. Prokof’ev, and I. N. Yassievich, Zh. Éksp. Teor. Fiz. 121, 692 (2002) [JETP 94, 593 (2002)].
A. Onton, P. Fisher, and A. K. Ramdas, Phys. Rev. 163, 686 (1967).
A. K. Ramdas and S. Rodrigeuez, Rep. Prog. Phys. 44, 1297 (1981).
V. Ya. Aleshkin, B. A. Andreev, V. I. Gavrilenko, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 582 (2000) [Semiconductors 34, 563 (2000)].
V. Ya. Aleshkin, B. A. Andreev, V. I. Gavrilenko, et al., Nanotechnology 11, 348 (2000).
V. Y. Aleshkin, A. V. Gavrilenko, V. I. Gavrilenko, et al., Phys. Status Solidi C 0, 680 (2003).
Ya. E. Pokrovskiĭ and N. A. Khval’kovskiĭ, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 197 (2005) [Semiconductors 39, 182 (2005)].
J. Broeckx and J. Vennik, Phys. Rev. B 35, 6165 (1987).
G. L. Bir and G. E. Pikus, Symmetry and Stain-Induced Effects in Semiconductors (Nauka, Moscow, 1972; Wiley, New York, 1975).
A. V. Andrianov, A. O. Zakhar’in, I. N. Yassievich, and N. N. Zinov’ev, Pis’ma Zh. Éksp. Teor. Fiz. 83, 410 (2006) [JETP Lett. 83, 351 (2006)].
Author information
Authors and Affiliations
Additional information
Original Russian Text © D.V. Kozlov, 2007, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 85, No. 4, pp. 247–250.