Abstract
The results of the development and the main characteristics of a new generation of semiconductor current switches (250 kA/25 kV/70 C) based on assemblies of series-connected reverse switched-on dynistors (RSDs) are presented. The methods for increasing the switched power and increasing the service life and reliability of RSD switches with maintenance of the previously accepted weight and size indicators were studied. The problem was solved by reducing the RSD power loss and increasing the resistance of the contact connections to the effects of high-power current pulses. The switch design was modernized and the silicon structure was optimized; a new technology for low-temperature connections in the silicon–metal system with the use of silver was developed, thus making it possible to double the active contact area and improve the load characteristics and service life of the new switches. The operating and maximum permissible values of the starting and switched currents were determined. The results of the operation of RSD switches in capacitive energy-storage devices of high-power laser devices are presented. Based on the results of life tests, the service life of new devices was assessed.
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Arzev, A.G., Galakhov, I.V., Ganin, L.S. et al. Current Pulse Switches on the Basis of Reverse Switch-on Dynistors for Power Electrophysical Equipment. Instrum Exp Tech 64, 529–538 (2021). https://doi.org/10.1134/S0020441221040138
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DOI: https://doi.org/10.1134/S0020441221040138