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Characteristics of silicon carbide detectors

Instruments and Experimental Techniques volume 58, pages 22–24 (2015)Cite this article

Abstract

A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given.

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Authors and Affiliations

  1. Joint Institute for Nuclear Research, ul. Joliot Curie 6, Dubna, Moscow oblast, 141980, Russia

    Yu. B. Gurov, S. V. Rozov, V. G. Sandukovsky, E. A. Yakushev & L. Hrubcin

  2. National Research Nuclear University, Moscow Engineering Physics Institute, Kashirskoe sh. 31, Moscow, 115541, Russia

    Yu. B. Gurov

  3. Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia

    L. Hrubcin & B. Zat’ko

Authors
  1. Yu. B. Gurov
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  2. S. V. Rozov
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  3. V. G. Sandukovsky
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  4. E. A. Yakushev
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  5. L. Hrubcin
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  6. B. Zat’ko
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Corresponding author

Correspondence to S. V. Rozov.

Additional information

Original Russian Text © Yu.B. Gurov, S.V. Rozov, V.G. Sandukovsky, E.A. Yakushev, L. Hrubcin, B. Zat’ko, 2015, published in Pribory i Tekhnika Eksperimenta, 2015, No. 1, pp. 29–31.

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Gurov, Y.B., Rozov, S.V., Sandukovsky, V.G. et al. Characteristics of silicon carbide detectors. Instrum Exp Tech 58, 22–24 (2015). https://doi.org/10.1134/S0020441215010054

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  • DOI: https://doi.org/10.1134/S0020441215010054

Keywords

  • Epitaxial Layer
  • Boron Carbide
  • Wide Energy Range
  • Charge Collection Efficiency
  • High Specific Resistance