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Characteristics of silicon carbide detectors


A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given.

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  1. Saddow, S.E. and Agarwal, A., Advances in Silicon Carbide Processing and Applications, Boston: Artech House, 2004.

    Google Scholar 

  2. Kalinina, E.V., Semiconductors, 2007, vol. 41, no. 7, p. 745.

    Article  ADS  Google Scholar 

  3. Ruddy, F.H. and Seidel, J.G., Nucl. Instrum. Methods Phys. Res., B, 2007, vol. 263, p. 163.

    Article  ADS  Google Scholar 

  4. Kalinina, E.V., Ivanov, A.M., and Strokan, N.B., Tech. Phys. Lett., 2008, vol. 34, no. 5, p. 210.

    Article  ADS  Google Scholar 

  5. Strokan, N.B., Ivanov, A.M., Kalinina, E.V., Kholuyanov, G.F., Onushkin, G.A., Davydov, D.V., and Violina, G.N., Semiconductors, 2005, vol. 39, no. 3, p. 364.

    Article  ADS  Google Scholar 

  6. Ruddy, F.H., Flammang, R.W., and Seidel, J.G., Nucl. Instrum. Methods Phys. Res., A, 2009, vol. 598, p. 518.

    Article  ADS  Google Scholar 

  7. Bertuccio, G., Caccia, S., Puglisi, D., and Macera, D., Nucl. Instrum. Methods Phys. Res., A, 2011, vol. 652, p. 193.

    Article  ADS  Google Scholar 

  8. Dubecky, F., Gombia, E., Ferrari, C., Zat’ko, B., Vanko, G., Baldini, M., Kovac, J., Bacek, D., Kovac, P., Hrkut, P., and Necas, V., J. Instument., 2012, vol. 7, p. 09005.

    Article  ADS  Google Scholar 

  9. Gurov, Yu.B., Gusev, K.N., Karpukhin, V.S., Lapushkin, S.V., Morokhov, P.V., Sandukovsky, V.G., and Yurkowski, J., Instrum. Exper. Tech., 2006, vol. 49, no. 5, p. 624.

    Article  Google Scholar 

  10. Brudanin, V.B., Gurov, Yu.B., Egorov, V.G., Rajchel, B., Borowicz, D., Rozov, S.V., Sandukovsky, V.G., and Yurkowski, J., Instrum. Exper. Tech., 2011, vol. 54, no. 4, p. 470.

    Article  Google Scholar 

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Correspondence to S. V. Rozov.

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Original Russian Text © Yu.B. Gurov, S.V. Rozov, V.G. Sandukovsky, E.A. Yakushev, L. Hrubcin, B. Zat’ko, 2015, published in Pribory i Tekhnika Eksperimenta, 2015, No. 1, pp. 29–31.

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Gurov, Y.B., Rozov, S.V., Sandukovsky, V.G. et al. Characteristics of silicon carbide detectors. Instrum Exp Tech 58, 22–24 (2015).

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  • Epitaxial Layer
  • Boron Carbide
  • Wide Energy Range
  • Charge Collection Efficiency
  • High Specific Resistance