Abstract
The possibilities of controlling the characteristics of field-effect Hall probes (FEHPs) that are based on “silicon-on-insulator” structures, whose design contains a field system of the “metal-insulator-semiconductor-insulator-metal” (MISIM) type, are considered. Adjusting the gate potential allows compensation of the residual voltage, reduction of the temperature dependence of the magnetosensitivity, minimization of the radiation effects, control of the value and dynamic range of the magnetosensitivity, and stabilization of the operating current. The use of MISIM structures in magnetic-field measurements permits the following: an induction-frequency conversion for FEHPs with the possibility to vary the operating frequency of the converter, an improvement of the signal-to-noise ratio via the gate modulation of the channel current, the use of an FEHP as the mixer in the heterodyne circuit for measuring the induction and frequency of alternating magnetic fields, and the improvement of the characteristics and data readout in multielement magnetic-field converters on the basis of an FEHP.
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Original Russian Text © M.L. Baranochnikov, A.V. Leonov, V.N. Mordkovich, D.M. Pazhin, 2012, published in Pribory i Tekhnika Eksperimenta, 2012, No. 6, pp. 100–107.
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Baranochnikov, M.L., Leonov, A.V., Mordkovich, V.N. et al. The features of magnetosensitive sensors based on a field-effect hall probe. Instrum Exp Tech 55, 701–708 (2012). https://doi.org/10.1134/S0020441212060024
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DOI: https://doi.org/10.1134/S0020441212060024