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Phase Equilibria in the Al–Ga–As–Bi System at 900°C

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Inorganic Materials Aims and scope

Abstract—

Solidus and liquidus isotherms in the Al–Ga–As–Bi system have been modeled for an initial epitaxy temperature of 900°C, which is needed for growing relatively thick (50–100 μm) compositionally graded AlxGa1–xAs layers. The theoretical isotherms have been confirmed by experimental data. It has been shown that, to grow relatively thick (>50 μm) AlGaAs layers, it is reasonable to use Ga–Bi mixed melts containing no more than 20 at % bismuth.

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Funding

This work was supported by the Russian Science Foundation, grant no. 22-19-00057. https://rscf.ru/project/22-19-00057/.

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  1. Ioffe Institute, 194021, St. Petersburg, Russia

    V. P. Khvostikov, O. A. Khvostikova, N. S. Potapovich & A. S. Vlasov

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  1. V. P. Khvostikov
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  2. O. A. Khvostikova
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  3. N. S. Potapovich
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  4. A. S. Vlasov
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Correspondence to V. P. Khvostikov.

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Translated by O. Tsarev

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Khvostikov, V.P., Khvostikova, O.A., Potapovich, N.S. et al. Phase Equilibria in the Al–Ga–As–Bi System at 900°C. Inorg Mater 59, 691–695 (2023). https://doi.org/10.1134/S0020168523070087

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