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Effect of Annealing on the Electrical Properties of (Bi + Sn)–Pb0.75Sn0.25Тe〈Sn〉 and (In + Ag + Au)–Pb0.75Sn0.25Тe〈Sn〉 Structures

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Abstract—

We have grown single crystals of the Pb0.75Sn0.25Тe solid solution containing up to 1.0 at % hyperstoichiometric Sn and produced metal–semiconductor structures based on the crystals with the use of Bi + Sn and In + Ag + Au eutectics. The effect of annealing on their electrical properties has been studied in the temperature range ~77–300 K. We assume that, filling vacancies in the Pb and Sn sublattices of the crystals, small amounts of excess Sn atoms reduce carrier concentration n, causing an increase in the resistivity ρ of the crystals and the specific contact resistance rc of the structures. High Sn concentrations lead to the formation of additional donor centers in the crystals, increasing n and, accordingly, reducing ρ and rc.

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Authors and Affiliations

  1. Azerbaijani State Economic University, AZ1001, Baku, Azerbaijan

    N. M. Akhundova

  2. Abdullaev Institute of Physics, Academy of Sciences of Azerbaijan, AZ1143, Baku, Azerbaijan

    T. D. Aliyeva

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  1. N. M. Akhundova
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  2. T. D. Aliyeva
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Correspondence to T. D. Aliyeva.

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Translated by O. Tsarev

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Akhundova, N.M., Aliyeva, T.D. Effect of Annealing on the Electrical Properties of (Bi + Sn)–Pb0.75Sn0.25Тe〈Sn〉 and (In + Ag + Au)–Pb0.75Sn0.25Тe〈Sn〉 Structures. Inorg Mater 59, 21–25 (2023). https://doi.org/10.1134/S0020168523010016

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