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Approaches to Increasing the Current-Carrying Characteristics in Second-Generation HTSC Tapes

  • Published:
Inorganic Materials Aims and scope

Abstract—

Recently, the number of projects has grown connected with the application of high-temperature superconductors (HTSC) with exceptionally high current-carrying characteristics in strong magnetic fields. However, the thickness of the RBa2Cu3O7–x (R = REE, Y) superconducting layer is only 1–2% of the thickness of HTSC tape. Increasing the current-carrying characteristics owing to the thickness of the conducting layer is a promising approach. The fundamental problem of crystallite formation of a-oriented crystallites prevents the development of this approach. Such crystallites do not carry superconducting current along the substrate tape and interfere with the growth of c-oriented crystallites. This review presents existing methods of suppression of a-oriented growth, the basis of the creation of HTSC materials, and prospects of obtaining HTSC materials with high current-carrying characteristics.

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Notes

  1. The terms “autonomous” and “nonautonomous” phases and states were introduced by J. Gibbs.

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Shchukin, A.E., Kaul’, A.R. Approaches to Increasing the Current-Carrying Characteristics in Second-Generation HTSC Tapes. Inorg Mater 58, 1365–1397 (2022). https://doi.org/10.1134/S0020168522130015

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