Abstract—
CdSe layers having high photosensitivity (photocurrent to dark current ratio of 6.2 × 104) and an extremely low carrier concentration (9 × 1011 cm–3) have been grown on muscovite mica by thermal evaporation in a quasi-closed system. These results are of interest for producing materials for position-sensitive semiconductor photodetectors based on CdSe layers. We have demonstrated that the 78-K cathodoluminescence spectra of the cadmium selenide layers grown at 853 K have a single line, corresponding to radiative annihilation of free A-excitons. The spectra of the layers grown at 833 K show a line of free A-excitons and its first phonon replica.
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Chukita, V.I., Senokosov, E.A., Surinov, V.G. et al. Excitonic Luminescence Spectra and Electrical Transport Properties of Photosensitive CdSe Layers Grown on Mica in a Quasi-Closed System. Inorg Mater 57, 669–673 (2021). https://doi.org/10.1134/S0020168521070037
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DOI: https://doi.org/10.1134/S0020168521070037