Skip to main content
Log in

Excitonic Luminescence Spectra and Electrical Transport Properties of Photosensitive CdSe Layers Grown on Mica in a Quasi-Closed System

  • Published:
Inorganic Materials Aims and scope

Abstract—

CdSe layers having high photosensitivity (photocurrent to dark current ratio of 6.2 × 104) and an extremely low carrier concentration (9 × 1011 cm–3) have been grown on muscovite mica by thermal evaporation in a quasi-closed system. These results are of interest for producing materials for position-sensitive semiconductor photodetectors based on CdSe layers. We have demonstrated that the 78-K cathodoluminescence spectra of the cadmium selenide layers grown at 853 K have a single line, corresponding to radiative annihilation of free A-excitons. The spectra of the layers grown at 833 K show a line of free A-excitons and its first phonon replica.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.

Similar content being viewed by others

REFERENCES

  1. Senokosov, E.A., Chukita, V.I., Khamidullin, R.A., et al., Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers, Semiconductors, 2017, vol. 51, no. 5, pp. 657–662.

    Article  CAS  Google Scholar 

  2. Chukita, V.I., Senokosov, E.A., and Feshchenko, V.S., Position-sensitive digital array photodetector based on CdSe/mica epitaxial layers, Vestn. Pridnestrovsk. Gos. Univ., Ser.: Fiz.-Mat. Nauki, 2019, no. 3 (63), pp. 19–24.

  3. Chukita, V.I., Senokosov, E.A., and Feshchenko, V.S., Testing bench for characterization of position-sensitive photodetectors, Ross. Tekhnol. Zh., 2019, vol. 7, no. 3, pp. 69–76.

    Google Scholar 

  4. Bubnov, Yu.Z., Lur’e, M.S., Staros, F.G., et al., Vakuumnoe nanesenie plenok v kvazizamknutom ob’’eme (Film Growth in a Quasi-Closed Vacuum System), Moscow: Sovetskoe Radio, 1975.

  5. Kalinkin, I.P., Aleskovskii, V.B., and Simashkevich, A.V., Epitaksial’nye plenki soedinenii A II B VI (Epitaxial II–VI Films), Leningrad: Leningr. Gos. Univ., 1978.

  6. Senokosov, E.A., Chukita, V.I., and Zhdanov, A.A., Control over quasi-closed growth of structurally perfect semiconductor layers, Vestn. Pridnestrovsk. Gos. Univ., Ser.: Fiz.-Mat. Nauki, 2018, no. 3 (60), pp. 16–19.

  7. Feldman, L.C. and Mayer, J.W., Fundamentals of Surface and Thin Film Analysis, New York: North-Holland, 1986.

    Google Scholar 

  8. Kuchis, E.V., Gal’vano-magnitnye effekty i metody ikh issledovaniya (Galvanomagnetic Effects and Methods for Assessing Them), Moscow: Radio i Svyaz’, 1990.

  9. Gavrilenko, V.I., Grekhov, A.M., Korbutyak, D.V., and Litovchenko, V.G., Opticheskie svoistva poluprovodnikov (Optical Properties of Semiconductors), Kiev: Naukova Dumka, 1987.

  10. Arora, B.M. and Compton, W.D., Luminescence from impurities and radiation defects in CdSe and CdS, J. Appl. Phys., 1972, vol. 43, no. 11, pp. 4499–4507.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to I. N. Odin.

Additional information

Translated by O. Tsarev

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Chukita, V.I., Senokosov, E.A., Surinov, V.G. et al. Excitonic Luminescence Spectra and Electrical Transport Properties of Photosensitive CdSe Layers Grown on Mica in a Quasi-Closed System. Inorg Mater 57, 669–673 (2021). https://doi.org/10.1134/S0020168521070037

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168521070037

Keywords:

Navigation